50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN
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P. C. Chao | P. M. Smith | P. Seekell | G. Cueva | B. Golja | Lee Mohnkern | W. Kong | Dong Xu | K.H.G. Duh | Xiaoping Yang | H. Karimy | R. G. Stedman | R. Isaak | R. A. Carnevale | L. Mt. Pleasant | K. K. Chu | L. Schlesinger | Alice Vera
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