Stochastic failure model for endurance degradation in vacancy modulated HfOx RRAM using the percolation cell framework
暂无分享,去创建一个
Daniel D. Frey | Nagarajan Raghavan | Michel Bosman | Kin Leong Pey | K. Pey | N. Raghavan | M. Bosman | D. Frey
[1] N. Singh,et al. Physical mechanisms of endurance degradation in TMO-RRAM , 2011, 2011 International Electron Devices Meeting.
[2] K. Hsieh,et al. A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device , 2010, 2010 Symposium on VLSI Technology.
[3] J. Sune,et al. New physics-based analytic approach to the thin-oxide breakdown statistics , 2001, IEEE Electron Device Letters.
[4] Hidenori Takagi,et al. Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices , 2008 .
[5] Shimeng Yu,et al. On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology , 2012, IEEE Transactions on Electron Devices.
[6] Kenneth A. LaBel,et al. Radiation and Reliability Concerns for Modern Nonvolatile Memory Technology , 2011 .
[7] YunSeung Shin,et al. Non-volatile memory technologies for beyond 2010 , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005..
[8] Bing Chen,et al. Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory , 2011, IEEE Electron Device Letters.
[9] Hisashi Shima,et al. Resistive Random Access Memory (ReRAM) Based on Metal Oxides , 2010, Proceedings of the IEEE.
[10] R. Williams,et al. Exponential ionic drift: fast switching and low volatility of thin-film memristors , 2009 .
[11] Ru Huang,et al. Statistical analysis of retention behavior and lifetime prediction of HfOBxB-based RRAM , 2011, 2011 International Reliability Physics Symposium.
[12] L. Goux,et al. Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation , 2012, 2012 International Electron Devices Meeting.
[13] J. Stathis. Percolation models for gate oxide breakdown , 1999 .
[14] Eun-Seok Choi,et al. A Novel 3D Cell Array Architecture for Terra-Bit NAND Flash Memory , 2011, 2011 3rd IEEE International Memory Workshop (IMW).
[15] Shimeng Yu,et al. A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory , 2012 .
[16] Zheng Fang,et al. Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect , 2013, IEEE Electron Device Letters.
[17] S. Koveshnikov,et al. High endurance performance of 1T1R HfOx based RRAM at low (<20μA) operative current and elevated (150°C) temperature , 2011, 2011 IEEE International Integrated Reliability Workshop Final Report.
[18] Alexander L. Shluger,et al. The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2 , 2009 .
[19] Tuo-Hung Hou,et al. RRAM SET speed-disturb dilemma and rapid statistical prediction methodology , 2012, 2012 International Electron Devices Meeting.
[20] Lionel Torres,et al. Design of MRAM based logic circuits and its applications , 2011, GLSVLSI '11.