Resonant Tunneling Diodes

[1]  T. C. McGill,et al.  Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes , 1991 .

[2]  Theodore S. Moise,et al.  A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter , 1998 .

[3]  J. P. Sage,et al.  A new RTD-FET logic family , 1999, Proc. IEEE.

[4]  Koichi Maezawa,et al.  InP-Based High-Performance Monostable-Bistable Transition Logic Element (MOBILE): an Intelligent Logic Gate Featuring Weighted-Sum Threshold Operations , 1996 .

[5]  Bernard S. Meyerson,et al.  Electron resonant tunneling in Si/SiGe double barrier diodes , 1991 .

[6]  T. C. Mcgill,et al.  Improved growth morphology of Si–Ge–C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy , 1997 .

[7]  J.P.A. van der Wagt,et al.  RTD/HFET low standby power SRAM gain cell , 1998, IEEE Electron Device Letters.

[8]  E. Ozbay,et al.  1.7-ps, microwave, integrated-circuit-compatible InAs/AlSb resonant tunneling diodes , 1993, IEEE Electron Device Letters.

[9]  A. Seabaugh,et al.  Nine-state resonant tunneling diode memory , 1992, IEEE Electron Device Letters.

[10]  J. Schulman.  Analysis of Sb-based resonant interband tunnel diodes for circuit modeling , 1999 .

[11]  J. N. Schulman,et al.  Extension of Tsu-Esaki model for effective mass effects in resonant tunneling , 1998 .

[12]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[13]  L. Esaki.  New Phenomenon in Narrow Germanium p-n Junctions , 1958 .

[14]  Gerhard Klimeck,et al.  Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes , 1998 .

[15]  T. Waho,et al.  In 0.53 Ga sub 0.47/As/AIAs resonant tunnelling diodes with switching time of 1.5 ps , 1995 .

[16]  O. Schmidt,et al.  High room temperature peak-to-valley current ratio in Si based Esaki diodes , 1999 .

[17]  L. Esaki,et al.  Resonant tunneling in semiconductor double barriers , 1974 .

[18]  Pinaki Mazumder,et al.  Digital circuit applications of resonant tunneling devices , 1998, Proc. IEEE.

[19]  T. C. Mcgill,et al.  Schottky barriers on compound semiconductors: The role of the anion , 1976 .

[20]  S. J. Allen,et al.  Terahertz response of resonant tunneling diodes , 1994 .

[21]  H. Morkoç,et al.  Progress and prospects for GaN and the III–V nitride semiconductors , 1993 .

[22]  David J. Frank,et al.  Empirical fit to band discontinuities and barrier heights in III–V alloy systems , 1992 .