文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
Comparison between the electrical properties of ZnO nanowires based field effect transistors fabricated by back- and top-gate approaches.
复制论文ID
分享
摘要
作者
参考文献
暂无分享,去
创建一个
J. H. Kim
|
M. Vaseem
|
S. Kim
|
A. Umar
|
Y. Hahn
|
E. Lee
|
Y. Park
保存到论文桶