Methods for assessing empirical model parameters and calibration pattern measurements
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Assessing an empirical model for ILT or OPC on a full-chip scale is a non-trivial task because the model's fit to calibration input data must be balanced against its robust prediction on wafer prints. When a model does not fit the calibration measurements well, we face the difficult choice between readjusting model parameters and re-measuring wafer CDs of calibration patterns. On the other hand, when a model does fit very well, we will still likely have the nagging suspicion that an overfitting might have occurred. Here we define a few objective and quantitative methods for model assessment. Both theoretical foundation and practical use are presented.
[1] Ralph E. Schlief. Effect of data selection and noise on goodness of OPC model fit , 2004, SPIE Advanced Lithography.
[2] Xin Zhou,et al. What is a good empirical model? , 2009, Photomask Technology.
[3] Yoram Bresler,et al. The stability of nonlinear least squares problems and the Cramer-Rao bound , 2000, IEEE Trans. Signal Process..