论文信息 - Anomalously high damping in strained InGaAs-GaAs single quantum well lasers

Anomalously high damping in strained InGaAs-GaAs single quantum well lasers

Measurements of the relative intensity noise spectra of strained, single-quantum-well, separate-confinement-heterostructure (SCH) InGaAs-GaAs lasers indicate that their frequency response is strongly damped. The ratio of the damping rate to the square of the resonance frequency is k=2.4 ns. This intrinsically limits the 3-dB modulation bandwidths of these lasers to about 4 GHz, negating the predicted increase in modulation bandwidth due to the large differential gain often associated with quantum-well devices. The damping behavior of these lasers is inconsistent with previous predictions of damping in bulk lasers due to spectral hole burning. A structure-dependent damping mechanism is proposed for quantum-well lasers.<<ETX>>

[1] Universal relationship between resonant frequency and damping rate of 1.3 μm InGaAsP semiconductor lasers , 1987 .

[2] V. Lanzisera,et al. Ultra-high-speed modulation of 1.3-µm InGaAsP diode lasers , 1986 .

[3] D. J. Channin,et al. Effect of gain saturation on injection laser switching , 1979 .

[4] K. Uomi,et al. Intrinsic modulation bandwidth in ultra-high-speed 1.3 and 1.55 mu m GaInAsP DFB lasers , 1989 .

[5] Benoit Deveaud,et al. Capture of photoexcited carriers by a laser structure , 1989 .

[6] W. Rideout,et al. The effect of damping on the frequency response of 1.5 µm quantum-well lasers , 1991 .

[7] W. Powazinik,et al. Reduction of relative intensity noise in 1.3 μm InGaAsP semiconductor lasers , 1987 .

[8] John E. Bowers,et al. High speed semiconductor laser design and performance , 1987 .

[9] C. Caneau,et al. Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics , 1990, IEEE Photonics Technology Letters.

[10] L. A. Coldren,et al. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser , 1988 .

[11] Effect of gain nonlinearities on the dynamic response of single-mode semiconductor lasers , 1989, IEEE Photonics Technology Letters.

[12] J. LaCourse,et al. Measurement of the carrier dependence of differential gain, refractive index, and linewidth enhancem , 1990 .