Results of benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node
暂无分享,去创建一个
[1] Benjamin Bunday,et al. Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control and several different CMOS features , 2003, SPIE Advanced Lithography.
[2] Marylyn Hoy Bennett,et al. Implementation of Reference Measurement System using CD-AFM , 2003, SPIE Advanced Lithography.
[3] John S. Villarrubia,et al. Determination of optimal parameters for CD-SEM measurement of line-edge roughness , 2004, SPIE Advanced Lithography.
[4] John S. Villarrubia,et al. CD-SEM measurement line edge roughness test patterns for 193 nm lithography , 2003, SPIE Advanced Lithography.
[5] Charles N. Archie,et al. Characteristics of accuracy for CD metrology , 1999, Advanced Lithography.
[6] Michael Bishop,et al. Benchmarking of advanced CD-SEMs at the 130-nm CMOS technology node , 2002, SPIE Advanced Lithography.
[7] Michael T. Postek,et al. Image sharpness measurement in scanning electron microscopy—part I , 2006 .
[8] Charles N. Archie,et al. Unified Advanced CD-SEM specification for Sub-0.18um Technology (1999 Version) | NIST , 2000 .
[9] Michael Bishop,et al. Specifications and methodologies for benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node and beyond , 2003, SPIE Advanced Lithography.
[10] Michael T. Postek,et al. Simulation study of repeatability and bias in the CD-SEM , 2003, SPIE Advanced Lithography.
[11] Charles N. Archie,et al. Benchmarking of Advanced CD-SEMs Against the New Unified Specification for Sub-0.18 Micrometer Lithography | NIST , 2000 .
[12] Martin E. Mastovich,et al. Electron beam metrology of 193-nm resists at ultralow voltage , 2003, SPIE Advanced Lithography.
[13] Mark P. Davidson,et al. Use of fast Fourier transform methods in maintaining stability of production CD-SEMs , 2000, Advanced Lithography.