Study Of The Effects Of Strain In Indium-Doped Gallium Arsenide By Electroreflectance And Photocapacitance

Electrolyte electroreflectance and photocapacitance measurements have been performed on In-doped and on undoped GaAs. They verify that In doping generates large inhomogeneous strains which locally lower the stability of the zincblende structure compared to the chalcopyrite structure, but that it lowers the density of dislocations and of antisites. They also show that the EL2 complex is intimately associated with As antisites.