Structural Design of Vertical-external-cavity Surface-emitting Semiconductor Laser with 920 nm

A vertical-external-cavity surface-emitting 920 nm semiconductor laser ( OP-VECSEL ) with active region of In 0. 09 Ga 0. 91 As quantum well ( QW ) system pumped by 808 nm laser diode module was constructed and optimized. By the finite element method , self-consistent solutions of electronic and optical equations of the semiconductor laser were realized and the characteristic parameters of OP-VECSEL were calculated. The performances of the especial mode in device , the threshold and the optical-optical conversion efficiency were analyzed by dealing with different structure parameters , including number of QWs ( 1 , 2 and 3 ) in one period , QW depth , width and component of bar- rier and dimension of the non-absorption layer. The best structure of the laser was chosen.