论文信息 - Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric

Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric

The off-state leakage current characteristics of nano-scaled MOSFETs with high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components and the influences of fringing induced barrier lowering (FIBL) effect and drain induced barrier lowering (DIBL) effect on each component are also investigated. For nano-scaled devices with high-k gates, the source leakage current becomes the major component of the off-state leakage current. The influences of structure parameters on the off-state leakage current are studied. The off-state performance of the devices with high-k gate dielectric can be improved by optimizing the device structure parameters.

[1] S. Y. Tan,et al. Challenges and performance limitations of high-k and oxynitride gate dielectrics for 90/65nm CMOS technology , 2007, Microelectron. J..

[2] Heng-Sheng Huang,et al. Study on Nano Complementary Metal Oxide Semiconductor Gate Leakage Current , 2003 .

[3] Byoung Hun Lee,et al. Metal Electrode/High-$k$ Dielectric Gate-Stack Technology for Power Management , 2008, IEEE Transactions on Electron Devices.

[4] J. Autran,et al. A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-κ gate dielectrics , 2005 .

[5] Proceedings of the IEEE , 2018, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[6] Donggun Park,et al. Leakage current comparison between ultra-thin Ta2O5 films and conventional gate dielectrics , 1998, IEEE Electron Device Letters.

[7] J.M.C. Stork,et al. The impact of high-/spl kappa/ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs , 1999 .

[8] J. Robertson. High dielectric constant oxides , 2004 .

[9] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .