Oxygen-containing radiation defects in Si1−xGex
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W. Schröder | N. Abrosimov | M. Sosnin | M. Höhne | Yu. V. Pomozov | L. I. Khirunenko | V. I. Yashnik
[1] L. Khirunenko,et al. Oxygen in silicon doped with isovalent impurities , 1999 .
[2] P. Gaworzewski,et al. Thermal donors in silicon-rich SiGe , 1998 .
[3] V. Shumov,et al. The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon , 1997 .
[4] P. Clauws,et al. Ge Content Dependence of the Infrared Spectrum of Interstitial Oxygen in Crystalline Si-Ge , 1997 .
[5] V. Shumov,et al. Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium , 1997 .
[6] M. Glück,et al. Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing , 1997 .
[7] S. N. Rossolenko,et al. Czochralski growth of Si- and Ge-rich SiGe single crystals , 1997 .
[8] S. N. Rossolenko,et al. Single crystal growth of Si1 − xGex by the Czochralski technique , 1996 .
[9] C. Kaneta,et al. Infrared absorption by interstitial oxygen in germanium-doped silicon crystals. , 1993 .
[10] A. Oates,et al. A model for radiation damage effects in carbon-doped crystalline silicon , 1987 .
[11] J. Corelli,et al. Oxygen-vibrational bands in irradiated silicon☆ , 1977 .
[12] V. Shumov,et al. Some Properties of Oxygen-Related Radiation Induced Defects in Silicon and Germanium , 1996 .
[13] B. Pajot. Chapter 6 Some Atomic Configurations of Oxygen , 1994 .
[14] B. Svensson,et al. Oxygen-Related Defects in Silicon , 1985 .