A 25 W, 2.3 to 2.7 GHz wideband LDMOS two-stage RFIC power amplifier for driver and small-cell Doherty application

A 25 W, dual-path, two-stage wideband RFIC power transistor covering 2.3 to 2.7 GHz band and targeting driver and small-cell application has been developed using the latest generation of LDMOS technology. Design techniques used to achieve wideband, flat gain, compact footprint, and improved isolation are discussed. A class AB driver prototype achieved more than 30 dB gain from 2.1 to 2.8 GHz with a raw ACPR of -45 dBc and 18% efficiency. Also developed is a state-of-the-art wideband Doherty amplifier for small-cell that achieved 28.5 dB gain and better than 40% efficiency and -55 dBc corrected ACPR when driven with a 60 MHz LTE signal at 2.35 and 2.6 GHz.

[1]  Mario Bokatius,et al.  A 350 W, 790 to 960 MHz wideband LDMOS doherty amplifier using a modified combining scheme , 2014, 2014 IEEE MTT-S International Microwave Symposium (IMS2014).

[2]  Satoshi Nagata,et al.  Trends in small cell enhancements in LTE advanced , 2013, IEEE Communications Magazine.

[3]  L.C.N. de Vreede,et al.  A wide-band 20W LMOS Doherty power amplifier , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[4]  Lu Wang,et al.  A 20 watt, two-stage, broadband LDMOS power amplifier IC in PQFN8×8 package at 2 GHz for wireless applications , 2012, 2012 7th European Microwave Integrated Circuit Conference.

[5]  Lei Zhao,et al.  A Doherty amplifier for TD-SCDMA base station applications based on a single packaged dual-path integrated LDMOS power transistor , 2010, 2010 IEEE MTT-S International Microwave Symposium.