The Pt/ZnLaO/ZnO/Pt structure resistive switching (RS) device was fabricated by chemical solution deposition (CSD) method, in which ZnO was used as a buffer layer. Compared with the Pt/ZnLaO/Pt structure device, by embedding a thin ZnO buffer layer between the ZnLaO and the Pt bottom electrode (BE), Pt/ZnLaO/ZnO/Pt structure device exhibits much better RS performances, such as narrow dispersion of resistance state and switching voltage. The reason for improvement of the RS behaviors in the Pt/ZnLaO/ZnO/Pt structure device is that the ZnO buffer layer may provide easy path to form a fixed conducting filament in the device.