Electric field effects in excitonic absorption for high-quality InGaAs/InAlAs multiple-quantum-well structures

The electric field effects in excitonic absorption characteristics are studied for high‐quality InGaAs/InAlAs multiple‐quantum‐well structures grown by molecular beam epitaxy. The minute comparison between the experimental and theoretical results verifies the following: first, the variations of exciton levels in the first subband show excellent agreement with the calculations; second, the exciton level in the second subband shows a shift to the higher energy (blue shift).

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