论文信息 - Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

High-quality GaN films were grown on epitaxial AlN/sapphire templates by metal-organic vapor phase epitaxy. The Hall mobility as high as 790 cm2/V s with the carrier concentration of 7.6×1016 cm−3 at 300 K along with low dislocation density of 5×107 cm−2 have been achieved. The X-ray rocking curve full-width at half-maximum were 61 and 232 arcsec for the (0 0 0 4) and (2024) reflections, respectively. Atomic force microscopy images showed smooth surface morphology and clear step formation. Additionally, pit terminations could be hardly found. Photoluminescence measurement revealed a higher intensity near the band edge.

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