Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy
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A. Allerman | M. Crawford | G. Pickrell | A. Armstrong | V. M. Abate | C. Glaser | J. Kempisty | V. Abate
暂无分享,去创建一个
A. Allerman | M. Crawford | G. Pickrell | A. Armstrong | V. M. Abate | C. Glaser | J. Kempisty | V. Abate