Study on band gap and dispersion model of Al2O3 thin films with different oxygen flow rates by ion beam sputtering
暂无分享,去创建一个
Huasong Liu | Shida Li | Yugang Jiang | Dandan Liu | Meiping Zhu | Dan Chen | Jiahuan He | Lishuan Wang
[1] D. M. Hoffman,et al. Al2O3 Films Prepared by Electron-Beam Evaporation of Hot-Pressed Al2O3 in Oxygen Ambient , 1971 .
[2] 陈德应 Chen Deying,et al. Energy Band Properties of Hafnium Oxide Thin Films Fabricated by Ion Beam Sputtering Technique , 2017 .
[3] Nilgun Ozer,et al. Preparation of amorphous Al2O3 films by the sol-gel process , 1999, Optics & Photonics.
[4] Joshua M. Pearce,et al. Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics , 2002, Journal of Applied Physics.
[5] S. Mohan,et al. Properties of Al2O3 films prepared by argon ion assisted deposition , 1994 .
[6] Yun Dong,et al. Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition , 2011 .
[7] V Ganesan,et al. Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films , 2012 .