Structural analysis of InP films grown on (100)Si substrates

Analysis of InP epitaxial films, grown on (100)Si substrates by metal-organic vapour-phase epitaxy, is performed including measurements of the surface topography, X-ray diffraction, and TEM investigations both in plan-view and in high resolution. Twin lamellae, small-angle grain boundaries, and dislocations at the substrate-film interface as well as within the InP layer are identified as the main deficiencies of the grown crystal. As demonstrated by the density of the twin-lamellae which decreases by three orders of magnitude towards the epitaxial-layer surface the crystal quality markedly improves during growth. Epitaktische InP-Schichten wurden mittels metallorganischer Gasphasenepitaxie auf exakt orientiertem (100)Si abgeschieden. Die Analyse der Filme umfaste neben einer Charakterisierung der Filmoberflache und rontgendiffraktometrischer Schichteigenschaften auch TEM-Untersuchungen, sowohl hochaufgelost als auch uber die gesamte Dicke der InP-Schicht. Als wesentliche Defekte an der Grenzflache des Substrates zum Film und innerhalb der InP-Schicht traten Zwillingslamellen, Kleinwinkelkorngrenzen und Versetzungen auf. Anhand der Dichte der Zwillingslamellen, die von der Grenzflache bis hin zur Filmoberflache um drei Zehnerpotenzen abnimmt, wurde eine zunehmende Perfektionierung der Kristallqualitat wahrend des Wachstums beobachtet.

[1]  E. Palik,et al.  Etching roughness for (100) silicon surfaces in aqueous KOH , 1991 .

[2]  D. Bimberg,et al.  Observation of the first‐order phase transition from single to double stepped Si (001) in metalorganic chemical vapor deposition of InP on Si , 1991 .

[3]  T. Tanbun-ek,et al.  Dependence of InGaAs/InP multiquantum well laser characteristics on the degree of substrate misorientation , 1991 .

[4]  J. Narayan,et al.  Defects and defect reduction processing in semiconductor heterostructures , 1991 .

[5]  Z. Liliental-Weber,et al.  Defect formation in epitaxial crystal growth , 1991 .

[6]  M. Umeno,et al.  Characterization of MOCVD-grown GaAs/strained layer superlattices/GaP/Si heterostructures by transmission electron microscopy , 1990 .

[7]  W. Jesser,et al.  On the generation of misfit dislocations , 1990 .

[8]  D. Biegelsen,et al.  Misfit dislocations in GaAs heteroepitaxy on (001) Si , 1990 .

[9]  Y. Takano,et al.  Initial Growth Mechanism of GaAs on Si(110) , 1990 .

[10]  Y. Kao,et al.  Generation and propagation of threading dislocations in GaAs grown on Si , 1990 .

[11]  E. Kaxiras,et al.  Model of epitaxial growth of GaAs on Si(100): Nucleation at surface steps , 1989 .

[12]  U. Pietsch.  X-Ray structure amplitudes for GaAs and InP , 1985 .

[13]  Z. G. Pinsker.  Dynamical Scattering of X-Rays in Crystals , 1978 .

[14]  D. Kuhlmann-wilsdorf,et al.  On the Theory of Interfacial Energy and Elastic Strain of Epitaxial Overgrowths in Parallel Alignment on Single Crystal Substrates , 1967 .