In this study, the electronic properties of sintered HgTe nanoparticles are characterized to determine the type of charge carrier within them, and to investigate their gate effects as a function of temperature. HgTe nanoparticles synthesized by the colloidal method were first deposited on thermally oxidized Si substrates by spin-coating, and then sintered at 150 °C. The sintered nanoparticles were determined to be p-type by analyzing the drain current and drain–source voltage (Id–Vds) relationship as a function of the gate voltage (Vg). The field-effect mobilities of the holes in the sintered HgTe nanoparticles are estimated to be 0.041, 0.036, and 0.022 cm2/(Vs) at 60, 180, and 300 K, respectively. The variation in the slope of the Id–Vds curve as a function of Vg becomes more distinctive as temperature decreases. At temperatures lower than 140 K, an inversion mode was observed for the channel of the sintered nanoparticles.