Chemical self-diffusion in CdTe

High-temperature in-situ galvanomagnetic measurements on CdTe are performed at temperatures T = 500-700°C in the interval of Cd pressures (P Cd ) one order of magnitude below and above the ideal stoichiometry line. The time evolution of samples after step-like change of P Cd is analyzed and the chemical diffusion coefficient D = 5 exp (-1.12 eV/k B T) (cm2/s) is evaluated. Neither magnitude of P Cd nor direction of the step of P Cd (increased/decreased) have manifested a distinguishable effect on D. Surface conduction below 600 °C dependent on P Cd is reported.