论文信息 - Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their - 字舞流文

Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their

Tetsuo Takahashi | Hajime Okumura | Hidekazu Tsuchida | Yasuto Hijikata | Masahito Yoshikawa | Hisayoshi Itoh | Yuuki Ishida | Tamotsu Jikimoto | Sadafumi Yoshida