Static induction type power rectifier

For application of a static induction type rectifier to a low voltage power rectifier and a high voltage rectifier, a lateral SOI structure and a P-type channel structure are proposed, respectively. Design methods for these structures are considered by device simulations. The simulations focus on optimization of the thickness of the buried oxide layer for the lateral SOI structure, and on the dosage of the channel for the P-type channel structure, respectively.