Thermal annealing behavior of InP-based HEMT damaged by proton irradiation

[1]  Zhi Jin,et al.  Effect of 1 MeV electron irradiation on gate contact characteristics of InP-based HEMTs , 2020 .

[2]  Zhi Jin,et al.  An improved empirical nonlinear model for InP-based HEMTs , 2020 .

[3]  Zhi Jin,et al.  Effect of Electron Irradiation Fluence on InP-Based High Electron Mobility Transistors , 2019, Nanomaterials.

[4]  C. Zhang,et al.  Proton Irradiation Effect on InP‐Based High Electron Mobility Transistor by Numerical Simulation with Non‐Uniform Induced Acceptor‐Like Defects , 2018 .

[5]  Mengke Li,et al.  Study on the shrinkage behavior and conductivity of silver microwires during electrostatic field assisted sintering , 2018 .

[6]  J. Ajayan,et al.  Investigation of breakdown performance in $$L_{g}$$Lg= 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications , 2018 .

[7]  P. Ding,et al.  Long‐Time Thermal Stability Comparison of Alloyed and Non‐Alloyed Ohmic Contacts for InP‐Based HEMTs , 2017 .

[8]  J. Ajayan,et al.  22 nm In 0.75 Ga 0.25 As channel-based HEMTs on InP/GaAs substrates for future THz applications , 2017 .

[9]  J. Ajayan,et al.  20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications , 2016 .

[10]  A. Paccagnella,et al.  Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs , 2015 .

[11]  J. Kwak,et al.  Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation. , 2013, Journal of nanoscience and nanotechnology.

[12]  C. R. Abernathy,et al.  High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors , 2002 .

[13]  Yiming Zeng,et al.  Rapid thermal annealing effects on step-graded InAlAs buffer layer and In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor structures on GaAs substrates , 2002 .

[14]  W. Spitzer,et al.  Effects of annealing on the carrier concentration of heavily Si-doped GaAs , 1973 .

[15]  F. Ren,et al.  Simulation of Radiation Effects in AlGaN/GaN HEMTs , 2015 .