Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor

We investigate the tunneling shot noise limits on the sensitivity of a micromechanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf SET, displacement sensitivities of 10−6 A/Hz may be possible.

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