论文信息 - Enhancement of current peak‐to‐valley ratio in In0.52Al0.48As/In0.53Ga0.47As ‐based resonant tunneling diodes

Enhancement of current peak‐to‐valley ratio in In0.52Al0.48As/In0.53Ga0.47As ‐based resonant tunneling diodes

The electrical characteristics of In0.52Al0.48As/In0.53 Ga 0.47 As resonant tunneling diodes are reported. These devices exhibit current peak‐to‐valley ratios up to 6.7 at room temperature. Differences in the current‐voltage characteristics for devices made from epilayers grown simultaneously on n+ and semi‐insulating InP substrates demonstrate the importance of minimizing the parasitic series resistance. The enhanced peak‐to‐valley ratio has been attributed to thick In0.52Al0.48 As barriers (50 A) and wide, undoped In0.53Ga0.47 As spacer‐layers (400 A).

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