Interface effects in modulation-doped GaAs/AlGaAs single quantum wells and superlattices

Abstract We investigate how the existence of interface graduation can modify the electronic properties in n and p-type modulation-doped GaAs/Al x Ga 1− x As single quantum wells (QWs) and superlattices. The system requires a self-consistent solution of Poisson and Schrodinger equations. Our results show that the existence of graded interfaces modifies carrier (electrons and holes) confinement inside of the GaAs quantum well, affecting the energy levels.