In situ scanning tunneling microscopy observation of surface morphology of GaAs(001) grown by molecular beam epitaxy

The surface morphology of molecular‐beam‐epitaxy‐grown GaAs(001) has been investigated using in situ scanning tunneling microscopy and reflection high‐energy electron diffraction. Films grown on nominally flat substrates at very slow growth rates display a multilevel system of terraces elongated along [110], suggesting an edge energy anisotropy of the order of 10:1 and a preference for sticking at B‐type steps.

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