论文信息 - High performance Si/SiGe pMOSFETs fabricated in a standard CMOS process technology

High performance Si/SiGe pMOSFETs fabricated in a standard CMOS process technology

Abstract In this paper, a standard CMOS technology is used to fabricate high performance Si/Si0.68Ge0.32 pMOS devices with thin Si cap layers. Careful fine-tuning of the epitaxial growth conditions and pre-epi surface treatment leads to the deposition of high quality facet free epitaxial layers. As compared to Si-only devices, the Si/Si0.68Ge0.32 devices exhibit strongly enhanced mobilities. For the best devices an increase by a factor of 2.5 can be seen. This enhanced mobility behaviour results in a strong increase of the on-state current and transconductance for devices with a gate length down to 0.13 μm.

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