Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs

Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting trade-off in analog/RF design space. It is seen that FinFETs possess key advantages over bulk FETs for applications around 5 GHz where the performance-power trade-off is important. In case of higher frequency applications bulk MOSFETs are shown to hold the advantage on account of their higher transconductance (Gm), provided a degraded voltage gain and a higher leakage current can be tolerated

[1]  R. Rooyackers,et al.  Towards optimally shaped fins in p-channel tri-gate FETs: can fin height be reduced further? , 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..

[2]  V. Kilchytska,et al.  Perspective of FinFETs for analog applications , 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

[3]  T. Schram,et al.  45 nm nMOSFET with metal gate on thin SiON driving 1150 /spl mu/A//spl mu/m and off-state of 10nA//spl mu/m , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..