Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction efficiencies are quantified in the 60%+ (AlGaInP) and ~80% (InGaN) regimes for state-of-the-art devices. The phosphor-based white LED concept is reviewed and recent performance discussed, showing that high-power white LEDs now approach the 100-lm/W regime. Devices employing multiple phosphors for "warm" white color temperatures (~3000-4000 K) and high color rendering (CRI>80), which provide properties critical for many illumination applications, are discussed. Recent developments in chip design, packaging, and high current performance lead to very high luminance devices (~50 Mcd/m2 white at 1 A forward current in 1times1 mm2 chip) that are suitable for application to automotive forward lighting. A prognosis for future LED performance levels is considered given further improvements in internal quantum efficiency, which to date lag achievements in light extraction efficiency for InGaN LEDs

[1]  VOLUME EXCITATION OF AN ULTRATHIN SINGLE‐MODE CdSe LASER , 1966 .

[2]  W. B. Joyce,et al.  Geometrical properties of random particles and the extraction of photons from electroluminescent diodes , 1974 .

[3]  H. Amano,et al.  Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .

[4]  H. Amano,et al.  P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) , 1989 .

[5]  R. Fletcher,et al.  High performance AlGaInP visible light‐emitting diodes , 1990 .

[6]  M. Ishikawa,et al.  High-efficiency InGaAlP/GaAs visible light-emitting diodes , 1991 .

[7]  Kazuhiko Itaya,et al.  High-brightness InGaAlP green light-emitting diodes , 1992 .

[8]  C. P. Kuo,et al.  Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer , 1992 .

[9]  Takashi Mukai,et al.  High‐power InGaN/GaN double‐heterostructure violet light emitting diodes , 1993 .

[10]  Randall S. Geels,et al.  Drift leakage current in AlGaInP quantum-well lasers , 1993 .

[11]  A. Scherer,et al.  30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes , 1993 .

[12]  C. P. Kuo,et al.  Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes , 1994 .

[13]  Shuji Nakamura,et al.  High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes , 1995 .

[14]  S. Nakamura,et al.  Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes , 1996 .

[15]  David Vanderbilt,et al.  Spontaneous polarization and piezoelectric constants of III-V nitrides , 1997 .

[16]  E. C. Carr,et al.  CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURAL DEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION , 1997 .

[17]  F. A. Kish,et al.  Chapter 5 AlGalnP Light-Emitting Diodes , 1997 .

[18]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[19]  J. Joannopoulos,et al.  High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals , 1997 .

[20]  Oliver Ambacher,et al.  Optical Process for Liftoff of Group III-Nitride Films , 1997 .

[21]  P. Schlotter,et al.  Luminescence conversion of blue light emitting diodes , 1997 .

[22]  F. A. Kish,et al.  High-flux, high-efficiency transparent-substrate AlGaInP/GaP light-emitting diodes , 1998 .

[23]  Nakamura,et al.  The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes , 1998, Science.

[24]  Shigeru Nakagawa,et al.  Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect , 1998 .

[25]  N. El-Masry,et al.  Phase separation in InGaN grown by metalorganic chemical vapor deposition , 1998 .

[26]  William S. Wong,et al.  Damage-free separation of GaN thin films from sapphire substrates , 1998 .

[27]  Jonathan J. Wierer,et al.  Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes , 1999 .

[28]  T. S. Tan,et al.  High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency , 1999 .

[29]  S. A. Stockman,et al.  1.4 EFFICIENCY IMPROVEMENT IN TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P LIGHT-EMITTING DIODES WITH THIN (<2000 A) ACTIVE REGIONS , 1999 .

[30]  N. Holonyak,et al.  Is the light emitting diode (LED) an ultimate lamp , 2000 .

[31]  H. Höppe,et al.  Luminescence in Eu 2+ -doped Ba 2 Si 5 N 8 : fluorescence, thermoluminescence, and upconversion , 2000 .

[32]  Eli Yablonovitch,et al.  Surface Recombination Measurements on III-V Candidate Materials for Nanostructure Light-Emitting Diodes , 2000 .

[33]  Jerry R. Meyer,et al.  Band parameters for III–V compound semiconductors and their alloys , 2001 .

[34]  F. Kish,et al.  In Pursuit of the ULTIMATE LAMP. , 2001 .

[35]  Michael R. Krames,et al.  High-power AlGaInN flip-chip light-emitting diodes , 2001 .

[36]  K. Streubel,et al.  High brightness AlGaInP light-emitting diodes , 2002 .

[37]  Michael R. Krames,et al.  High-power phosphor-converted light-emitting diodes based on III-Nitrides , 2002 .

[38]  Takashi Mukai,et al.  InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode , 2002 .

[39]  Paul S. Martin,et al.  Illumination with solid state lighting technology , 2002 .

[40]  Henri Benisty,et al.  Toward ultrahigh-efficiency aluminum oxide microcavity light-emitting diodes: guided mode extraction by photonic crystals , 2002 .

[41]  S. A. Stockman,et al.  Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes , 2003 .

[42]  V. Haerle,et al.  High brightness LEDs for general lighting applications Using the new ThinGaN™‐Technology , 2004 .

[43]  David B. Slater,et al.  High efficiency GaN-based LEDs and lasers on SiC , 2004 .

[44]  Kazuyoshi Iida,et al.  350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN , 2004 .

[45]  Takashi Mukai,et al.  Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes , 2004 .

[46]  Joel R. Wendt,et al.  InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures , 2004 .

[47]  E. Haller,et al.  On the crystalline structure, stoichiometry and band gap of InN thin films , 2004 .

[48]  F. Stadler,et al.  Highly efficient all‐nitride phosphor‐converted white light emitting diode , 2005 .

[49]  James S. Speck,et al.  Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode , 2005 .

[50]  Holger Moench,et al.  UHP lamp systems for projection applications , 2005 .

[51]  M. Ilegems,et al.  High efficiency planar MCLEDs , 2005 .

[52]  Wendy Davis,et al.  Toward an improved color rendering metric , 2005, SPIE Optics + Photonics.

[53]  Jonathan J. Wierer,et al.  Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes , 2005 .

[54]  Paul S. Martin,et al.  High performance thin-film flip-chip InGaN–GaN light-emitting diodes , 2006 .

[55]  Takashi Mukai,et al.  Ultra-High Efficiency White Light Emitting Diodes , 2006 .

[56]  S. H. Teoh,et al.  Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes , 2006, IEEE Transactions on Device and Materials Reliability.

[57]  T. Mukai,et al.  Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates , 2006 .

[58]  M. Krames,et al.  Performance of High Power Light Emitting Diodes in Display Illumination Applications , 2007, Journal of Display Technology.