Influence of the Total Ionizing Dose Irradiation on 130 nm Floating-body PDSOI NMOSFETs

This paper investigates the impact of ionizing radiation on floating body effects for the 130 nm PDSOI NMOSFETs. It is shown that the floating body effects are restrained by the irradiation both for the core device and the input/output (I/O) device. For the core device, the second peak of the front gate transconductance which is known as the gate-induced floating body effect degrades with the incremental total dose. The decline of the second gm peak is ascribed to the impact of the radiation-induced leakage current, but not to the radiation-induced interface traps assisted recombination or the suppression of the electron valence band (EVB) tunneling. For the I/O device, the kink effect and the hysteresis effect in the output characteristic which are observed before irradiation become insignificant after irradiation. These phenomena are due to the fully depleted of the silicon film in the I/O device which is caused by the buried oxide charge trapping. In addition, a radiation-induced latch, which is result from the leakage current-induced impact ionization, is also observed in the I/O device.

[1]  A.J. Auberton-Herve,et al.  SOI : Materials to Systems , 1996, International Electron Devices Meeting. Technical Digest.

[2]  J.A. Felix,et al.  Radiation Effects in MOS Oxides , 2008, IEEE Transactions on Nuclear Science.

[3]  Chenming Hu,et al.  MOSFET Modeling & BSIM3 User’s Guide , 1999 .

[4]  Eddy Simoen,et al.  Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation , 2004 .

[5]  Theodore I. Kamins,et al.  Device Electronics for Integrated Circuits , 1977 .

[6]  A. Mercha,et al.  "Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS , 2003 .

[7]  Sorin Cristoloveanu,et al.  Frontiers of silicon-on-insulator , 2003 .

[8]  H. L. Hughes,et al.  Total dose hardening of SIMOX buried oxides for fully depleted devices in rad-tolerant applications , 1996 .

[9]  P E Dodd,et al.  Current and Future Challenges in Radiation Effects on CMOS Electronics , 2010, IEEE Transactions on Nuclear Science.

[10]  Kenneth F. Galloway,et al.  Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs , 1993 .

[11]  H.J. Barnaby,et al.  Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.

[12]  S. Cristoloveanu,et al.  Hot-carrier-induced degradation of the back interface in short-channel silicon-on-insulator MOSFETS , 1991, IEEE Electron Device Letters.

[13]  P. Winokur,et al.  Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .

[14]  N. Arora,et al.  MOSFET substrate current model for circuit simulation , 1991 .

[15]  H. Barnaby,et al.  Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies , 2005, IEEE Transactions on Nuclear Science.

[16]  N.F. Haddad,et al.  Effect of Total Dose Radiation on Device Self Latch-Up , 1992, 1992 IEEE International SOI Conference.

[17]  S. Cristoloveanu,et al.  Reduced floating body effects in narrow channel SOI MOSFETs , 2002, IEEE Electron Device Letters.

[18]  C. Hu,et al.  Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling , 2001 .

[19]  S. T. Liu,et al.  Total dose radiation hard 0.35 /spl mu/m SOI CMOS technology , 1998 .

[20]  Pascale Gouker,et al.  Substrate removal and BOX thinning effects on total dose response of FDSOI NMOSFET , 2003 .

[21]  Eddy Simoen,et al.  High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors , 2004 .

[22]  Hyung-Kyu Lim,et al.  Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's , 1983, IEEE Transactions on Electron Devices.

[23]  J. Jomaah,et al.  Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs , 2002, IEEE Electron Device Letters.

[24]  S. Wolf,et al.  Silicon Processing for the VLSI Era , 1986 .

[25]  Sorin Cristoloveanu,et al.  Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations , 1998 .

[26]  M. L. Alles,et al.  Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors , 2013, IEEE Transactions on Nuclear Science.

[27]  Lloyd W. Massengill,et al.  Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides , 1999 .

[28]  S. Zou,et al.  Total Dose Irradiation-Induced Degradation of Hysteresis Effect in Partially Depleted Silicon-on-Insulator NMOSFETs , 2013, IEEE Transactions on Nuclear Science.

[29]  P. Dodd,et al.  Radiation effects in SOI technologies , 2003 .