Influence of crucible shape on mass transport in AlN crystal growth by physical vapor transport process

[1]  Luyi Wu,et al.  Hotzone design and optimization for 2-in. AlN PVT growth process through global heat transfer modeling and simulations , 2017 .

[2]  L. Kirste,et al.  Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices , 2016 .

[3]  Luca Faust,et al.  Physical Fluid Dynamics , 2016 .

[4]  H. Emmerich,et al.  A study of the step-flow growth of the PVT-grown AlN crystals by a multi-scale modeling method , 2014 .

[5]  M. Bickermann,et al.  Bulk AlN growth by physical vapour transport , 2014 .

[6]  R. Sumathi.  Native seeding and silicon doping in bulk growth of AlN single crystals by PVT method , 2014 .

[7]  M. Bickermann,et al.  Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals , 2013 .

[8]  K. Kakimoto,et al.  The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals , 2012 .

[9]  Y. Kangawa,et al.  Novel Solution Growth Method of Bulk AlN Using Al and Li3N Solid Sources , 2011 .

[10]  A. Wolfson,et al.  Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals , 2010 .

[11]  R. Schlesser,et al.  Growth of AlN single crystalline boules , 2010 .

[12]  Jaime A. Freitas,et al.  Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers , 2010 .

[13]  K. E. Morgan,et al.  The progress of AlN bulk growth and epitaxy for electronic applications , 2009 .

[14]  H. Miyake,et al.  Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template , 2009 .

[15]  Y. Makarov,et al.  Sublimation growth of 2 inch diameter bulk AlN crystals , 2008 .

[16]  Toru Nagashima,et al.  Self-Separation of a Thick AlN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire , 2008 .

[17]  Leo J. Schowalter,et al.  Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication , 2008 .

[18]  J. Freitas.  Properties of the State-of-the-Art Bulk and Homoepitaxial Films of III-V Nitride Semiconductors , 2007 .

[19]  A. Winnacker,et al.  Similarities and differences in sublimation growth of SiC and AlN , 2007 .

[20]  K. Kamei,et al.  Solution growth of AlN single crystal using Cu solvent under atmospheric pressure nitrogen , 2007 .

[21]  A. Usikov,et al.  Thick AlN layers grown by HVPE , 2005 .

[22]  Balaji Raghothamachar,et al.  Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules , 2005 .

[23]  Bei Wu,et al.  Transport phenomena in an aluminum nitride induction heating sublimation growth system , 2004 .

[24]  V. Prasad,et al.  Modeling and simulation of AlN bulk sublimation growth systems , 2004 .

[25]  S. Beaudoin,et al.  Mass transfer in AlN crystal growth at high temperatures , 2004 .

[26]  A. Winnacker,et al.  Growth of Bulk AlN Crystals for SAW Devices , 2004 .

[27]  Y. Makarov,et al.  Advances in modeling of wide‐bandgap bulk crystal growth , 2003 .

[28]  M. Dudley,et al.  GROWTH KINETICS AND THERMAL STRESS IN ALN BULK CRYSTAL GROWTH , 2003 .

[29]  J. Edgar,et al.  A Global Growth Rate Model for Aluminum Nitride Sublimation , 2002 .

[30]  M. Boćkowski.  Growth and Doping of GaN and AlN Single Crystals under High Nitrogen Pressure , 2001 .

[31]  J. Edgar,et al.  Transport effects in the sublimation growth of aluminum nitride , 2000 .

[32]  Takatomo Sasaki,et al.  Growth of nitride crystals, BN, AlN and GaN by using a Na flux , 2000 .

[33]  Oliver Ambacher,et al.  Growth and applications of Group III-nitrides , 1998 .

[34]  Marcel Crochet,et al.  Global modelling of heat transfer in crystal growth furnaces , 1990 .

[35]  G. A. Slack,et al.  Growth of high purity AlN crystals , 1976 .