A complementary gain cell technology for sub-1 V supply DRAMs

A Complementary Gain (CG) cell concept is proposed and experimentally demonstrated to overcome the scaling limit of the conventional DRAM cell. The CG cell performance is described in comparison with a conventional cell from the viewpoint of factors relevant to gigabit integration, such as supply voltage scalability, minimum storage capacitance, immunity to noise on bitline and cell size. The test CG memory cell operation is successfully demonstrated at a supply voltage below 1V.<<ETX>>