Reduction of interface phonon modes using metal-semiconductor heterostructures

Based on a simplified analysis of perfectly conducting metals, it has been suggested qualitatively that establishing metal‐semiconductor interfaces at the heterojunctions of polar semiconductor quantum wells introduces a set of boundary conditions that dramatically reduces or eliminates unwanted carrier energy loss caused by interactions with interface longitudinal‐optical (LO) phonon modes. In this article, it is theoretically demonstrated that comparable reductions in LO phonon scattering strengths may be achieved for metal‐semiconductor structures with metal having realistic conductivities and Thomas–Fermi screening lengths.

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