Selected‐area sputter epitaxy of iron‐garnet films

The growth of single‐crystal bismuth iron‐garnet films by in situ sputter epitaxy has been extended to ‘‘selected‐area sputter epitaxy’’ (SASE) where epitaxial growth is locally impeded by low‐energy (102 eV) ion bombardment of the substrate from an argon plasma before film deposition. Then, in a critical range of substrate temperatures, a pattern of epitaxial and amorphous patches evolves during deposition with high geometrical resolution. The optical and structural properties of both SASE phases are investigated.

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