论文信息 - Uniform and thermally stable AuGeNi ohmic contacts to GaAs

Uniform and thermally stable AuGeNi ohmic contacts to GaAs

An in situ rf sputter precleaning of the GaAs substrate before AuGeNi ohmic metal deposition yields contact resistance Rc=0.11 Ω mm at a peak doping of ∼1018/cm3. Excellent uniformity and thermal stability are achieved across the wafer. The contacts do not deteriorate appreciably after themal treatment at 410 °C for 57 h.

[1] N. Braslau. Alloyed ohmic contacts to GaAs , 1981 .

[2] M. Nathan,et al. Characteristics of AuGeNi ohmic contacts to GaAs , 1982 .

[3] N. Braslau. Ohmic contacts to GaAs , 1983 .

[4] S. Sinharoy,et al. Preparation of a clean GaAs , 1984, IEEE Transactions on Electron Devices.

[5] T. Jackson,et al. Electron microscope studies of an alloyed Au/Ni/Au‐Ge ohmic contact to GaAs , 1983 .

[6] J. Woodall,et al. Elevated temperature low energy ion cleaning of GaAs , 1983 .

[7] Horst H. Berger,et al. Models for contacts to planar devices , 1972 .

[8] M. Ogawa. Alloying behavior of Ni/Au‐Ge films on GaAs , 1980 .

[9] K. Heime,et al. Very low resistance Ni_AuGe_Ni contacts to n-GaAs , 1974 .

[10] H. G. Henry,et al. Hot-plate alloying for ohmic contacts to GaAs , 1984, IEEE Transactions on Electron Devices.

[11] A. Iliadis,et al. Metallurgical behaviour of Ni/AuGe ohmic contacts to GaAs , 1984 .