Applications of scaling to problems in high‐field electronic transport
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[1] C. R. Crowell,et al. Ionization coefficients in semiconductors: A nonlocalized property , 1974 .
[2] David K. Ferry,et al. Self-Scattering Path-Variable Formulation of High-Field, Time-Dependent, Quantum Kinetic Equations for Semiconductor Transport in the Finite-Collision-Duration Regime , 1979 .
[3] C. Canali,et al. High‐field diffusion of electrons in silicon , 1975 .
[4] Thomas P. Pearsall,et al. The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs , 1978 .
[5] T. Ando. Screening Effect and Quantum Transport in a Silicon Inversion Layer in Strong Magnetic Fields , 1977 .
[6] W. Fawcett,et al. Monte Carlo determination of electron transport properties in gallium arsenide , 1970 .
[7] John L. Moll,et al. Physics of Semiconductors , 1964 .
[8] R. R. Troutman. Silicon surface emission of hot electrons , 1978 .
[9] C. R. Crowell,et al. Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors , 1972 .
[10] A. G. Chynoweth,et al. Uniform Silicon p‐n Junctions. II. Ionization Rates for Electrons , 1960 .
[11] F. Capasso,et al. Observation of Electronic Band-Structure Effects on Impact Ionization by Temperature Tuning , 1977 .
[12] C. R. Crowell,et al. Energy-Conservation Considerations in the Characterization of Impact Ionization in Semiconductors , 1972 .
[13] C. R. Crowell,et al. Effective threshold energy for pair production in nonpolar semiconductors , 1976 .
[14] T. Maloney,et al. Transient and steady‐state electron transport properties of GaAs and InP , 1977 .
[15] C. Jacoboni,et al. A review of some charge transport properties of silicon , 1977 .
[16] Carlton M. Osburn,et al. Effect of electron trapping on IGFET characteristics , 1977 .
[17] B. Nag. Theory of electrical transport in semiconductors , 1972 .
[18] W. N. Grant. Electron and hole ionization rates in epitaxial silicon at high electric fields , 1973 .
[19] K. K. Thornber,et al. Relation of drift velocity to low‐field mobility and high‐field saturation velocity , 1980 .
[20] T. H. Ning,et al. Hot-electron emission from silicon into silicon dioxide , 1978 .
[21] A. Gossard,et al. Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System , 1980 .
[22] C. R. Crowell,et al. Normalized theory of impact ionization and velocity saturation in nonpolar semiconductors via a Markov chain approach , 1979 .
[23] W. Shockley. Problems related to p-n junctions in silicon , 1961 .
[24] G. A. Baraff,et al. Distribution Functions and Ionization Rates for Hot Electrons in Semiconductors , 1962 .
[25] R. A. Logan,et al. Ionization Rates of Holes and Electrons in Silicon , 1964 .
[26] P. A. Wolff,et al. Theory of Electron Multiplication in Silicon and Germanium , 1954 .
[27] R. A. Kokosa,et al. Avalanche breakdown of diffused silicon p-n junctions , 1966 .
[28] F. Capasso,et al. Temperature dependence of impact ionisation rates in GaAs between 20° and 200°C , 1979 .
[29] K. Thornber. High-field electronic conduction in insulators , 1978 .
[30] W. C. Johnson,et al. Use of a Schottky barrier to measure impact ionization coefficients in semiconductors , 1973 .
[31] O. Christensen,et al. Quantum efficiency of the internal photoelectric effect in silicon and germanium , 1976 .
[32] J. R. Schrieffer,et al. Effective Carrier Mobility in Surface-Space Charge Layers , 1955 .
[33] C. Jacoboni. Generalization of Fick's Law for Non‐Local Complex Diffusion in Semiconductors , 1974 .
[34] B. Alder,et al. Modification of Fick's Law , 1979 .
[35] J. G. Ruch,et al. Electron dynamics in short channel field-effect transistors , 1972 .
[36] I. Lindau,et al. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States , 1980 .
[37] A. G. Chynoweth,et al. Ionization Rates for Electrons and Holes in Silicon , 1958 .
[38] E. Kane. Electron Scattering by Pair Production in Silicon , 1967 .
[39] A. G. Chynoweth,et al. Threshold Energy for Electron-Hole Pair-Production by Electrons in Silicon , 1957 .
[40] R. V. Overstraeten,et al. Measurement of the ionization rates in diffused silicon p-n junctions , 1970 .
[41] S. A. Abbas,et al. Hot‐carrier instability in IGFET’s , 1975 .
[42] R. Van Overstraeten,et al. Charge multiplication in silicon p-n junctions☆ , 1963 .