Flash memories: where we were and where we are going

This paper examines why stacked gate ETOX/sup TM/ is the highest volume flash memory technology up to now. Looking into the future, technologies for flash memories will become more diversified. Multi-level storage technology will be prevalent and plays a dominant role in lowering bit cost. Flash memory card is emerging as a new market segment, and there is increasing demand to integrate high performance logic with flash.

[1]  V. N. Kunett,et al.  An In-system Reprogrammable 256k Cmos Flash Memory , 1988, 1988 IEEE International Solid-State Circuits Conference, 1988 ISSCC. Digest of Technical Papers.

[2]  M. Momodomi,et al.  New ultra high density EPROM and flash EEPROM with NAND structure cell , 1987, 1987 International Electron Devices Meeting.

[3]  Dana Lee,et al.  A novel 3 volts-only, small sector erase, high density flash E/sup 2/PROM , 1994, Proceedings of 1994 VLSI Technology Symposium.

[4]  N. Ajika,et al.  A novel cell structure suitable for a 3 volt operation, sector erase flash memory , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[5]  Ranjeet Alexis,et al.  A multilevel-cell 32 Mb flash memory , 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.

[6]  S. Kianian.  A novel 3 volts-only small sector erase, high density Flash E^2PROM , 1994 .

[7]  C.W. Leung,et al.  Serial 9 Mb flash EEPROM for solid state disk applications , 1992, 1992 Symposium on VLSI Circuits Digest of Technical Papers.

[8]  H. Kume.  A 1.28μm^2 contactless memory cell technology for a 3V-only 64Mbit EEPROM , 1992 .

[9]  S. Tanaka,et al.  A new flash E2PROM cell using triple polysilicon technology , 1984, 1984 International Electron Devices Meeting.