Film modification by low energy ion bombardment during deposition

Abstract Concurrent energetic particle bombardment can have a significant effect on the properties of evaporated and sputter-deposited films. However, in many experiments, particularly those using ion beam sputtering, the magnitude of the energetic bombardment by neutrals is ignored or underestimated. The effects of energetic bombardment include significant physical changes in the crystal sizes and orientations, defect densities, electrical and optical properties, chemical stoichiometry and surface morphologies. While there exists no general model for the effect of energetic bombardment on growing film properties, in a range of experiments researchers have started to explore systematically the interrelations of the various physical and chemical effects. These results will be helpful in elucidating what phenomena are relevant in any particular experimental system.

[1]  P. Zalm,et al.  Ion beam epitaxy of silicon on Ge and Si at temperatures of 400 K , 1982 .

[2]  T. C. Huang,et al.  Interpretation of the nonbulklike optical density of thin copper films grown under ion bombardment. , 1985 .

[3]  K. Müller Modelling ion-assisted deposition of CeO2 films , 1986 .

[4]  J. Cuomo,et al.  Alignment of thin films by glancing angle ion bombardment during deposition , 1985 .

[5]  H. F. Winters,et al.  Influence of ion bombardment on the interaction of Sb with the Si(100) surface , 1987 .

[6]  J. J. Cuomo,et al.  Incorporation of rare gases in sputtered amorphous metal films , 1977 .

[7]  P. Ziemann,et al.  Model of bias sputtering in a dc-triode configuration applied to the production of Pd films , 1982 .

[8]  J. Harper,et al.  Combined ion beam deposition and etching for thin film studies , 1979 .

[9]  E. Hirsch,et al.  Thin film annealing by ion bombardment , 1980 .

[10]  R. J. Sneed,et al.  Nucleation, growth and transformation of amorphous and crystalline solids condensing from the gas phase , 1979 .

[11]  D. W. Hoffman,et al.  Internal stresses in amorphous silicon films depositied by cylindrical magnetron sputtering using Ne, Ar, Kr, Xe, and Ar+H2 , 1981 .

[12]  M. Drechsler,et al.  A study of the surface self-diffusion of tungsten induced by ion impact , 1980 .

[13]  D. W. Hoffman,et al.  Internal stresses in sputtered chromium , 1977 .

[14]  R. M. Bradley,et al.  Theory of thin‐film orientation by ion bombardment during deposition , 1986 .

[15]  D. S. Yee,et al.  Modification of niobium film stress by low‐energy ion bombardment during deposition , 1982 .

[16]  Toshinori Takagi,et al.  Ionized-Cluster Beam Depositon and Epitaxy , 1979 .

[17]  H A Macleod,et al.  Ion-beam-assisted deposition of thin films. , 1983, Applied optics.

[18]  John A. Thornton,et al.  Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings , 1974 .

[19]  Huang,et al.  Optical and electrical properties of thin silver films grown under ion bombardment. , 1986, Physical review. B, Condensed matter.

[20]  Miko Marinov,et al.  Effect of ion bombardment on the initial stages of thin film growth , 1977 .

[21]  Müller,et al.  Ion-beam-induced epitaxial vapor-phase growth: A molecular-dynamics study. , 1987, Physical review. B, Condensed matter.

[22]  H. F. Winters,et al.  GAS INCORPORATION INTO SPUTTERED FILMS. , 1967 .

[23]  H. F. Winters,et al.  Sputtering of chemisorbed gas (nitrogen on tungsten) by low‐energy ions , 1974 .

[24]  Winters,et al.  Sputtering of chemisorbed nitrogen from single-crystal planes of tungsten and molybdenum. , 1987, Physical review. B, Condensed matter.