High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE

The advantages of mercury cadmium telluride for 'HOT' IR detector applications are discussed. Molecular beam epitaxy (MBE) is used to grow advanced device structures for this purpose. MBE offers the potential to grow HgCdTe heterostructure layers on large silicon substrates leading to very large format and high performance IR focal plane array sin the future. Preliminary material and device properties achieved p+-v-n+ device structures grown on 3 inch oriented silicon wafers are discussed.