论文信息 - VBIC95: An improved vertical, IC bipolar transistor model

VBIC95: An improved vertical, IC bipolar transistor model

This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature.

[1] H. C. Poon,et al. An integral charge control model of bipolar transistors , 1970, Bell Syst. Tech. J..

[2] C. Jacoboni,et al. A review of some charge transport properties of silicon , 1977 .

[3] E. J. Prendergast,et al. A unified circuit model for bipolar transistors including quasi-saturation effects , 1985, IEEE Transactions on Electron Devices.

[4] Colin C. McAndrew,et al. A Cinfinity-continuous depletion capacitance model , 1993, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[5] P. Weil,et al. Simulation of excess phase in bipolar transistors , 1978 .

[6] Jerry G. Fossum,et al. A charge-based large-signal bipolar transistor model for device and circuit simulation , 1989 .

[7] F. Klaassen,et al. Compact transistor modelling for circuit design , 1990 .

[8] H.C. de Graaff,et al. New formulation of the current and charge relations in bipolar transistor modeling for CACD purposes , 1985, IEEE Transactions on Electron Devices.

[9] H. Stubing,et al. A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part I: One-dimensional model , 1987, IEEE Transactions on Electron Devices.