Characterization of Pure Water-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets

A GaAs surface treated with pure water was characterized by using contact angle measurement. Auger electron spectroscopy, and atomic force microscopy. The contact angle was found to be dependent on treatment conditions such as treatment time, agitation of pure water, dissolved oxygen concentration in pure water, and illumination. The contact angle of a water droplet on GaAs surface treated with agitated deionized pure water was found to increase with increasing treatment time, indicating that the hydrophobicity of the surface increased. The agitation of pure water strongly influenced the oxygen concentration and the roughness of the treated GaAs surface, and hence, the contact angle of a water droplet on it, t.

[1]  N. Suzuki,et al.  Hydrophobicity of a Hydrochloric‐Treated GaAs Surface Analyzed by Contact Angle Measurement , 1998 .

[2]  S. Adachi,et al.  Study of GaAs(001) Surfaces Treated in Aqueous HCl Solutions , 1997 .

[3]  N. Suzuki,et al.  Hydrofluoric-treated GaAs surfaces analyzed by contact angle measurement and auger electron spectroscopy , 1996 .

[4]  Y. Homma,et al.  Oxidation of GaAs Surfaces in Deionized Water Studied by X-ray Photoelectron Spectroscopy , 1996 .

[5]  K. Sumitomo,et al.  Thermal effects on surface Fermi level for GaAs(001) , 1996 .

[6]  Y. Hirota,et al.  Scanning tunneling microscopy study of GaAs(001) surface prepared by deoxygenated and de‐ionized water treatment , 1995 .

[7]  S. Miyazaki,et al.  Observation of HCl- and HF-Treated GaAs Surfaces by Measuring Contact Angles of Water Droplets , 1994 .

[8]  T. Fukui,et al.  Macroscopic electronic behavior and atomic arrangements of GaAs surfaces immersed in HCl solution , 1994 .

[9]  Y. Hirota Effects of dissolved oxygen in a de‐ionized water treatment on GaAs surface , 1994 .

[10]  T. Ohmi,et al.  Advanced ultrapure water systems with low dissolved oxygen for native oxide free wafer processing , 1992 .

[11]  Y. Homma,et al.  Cleaning Effects of Running Deionized Water on a GaAs Surface , 1991 .

[12]  J. Massies,et al.  Residual Carbon and Oxygen Surface Contamination of Chemically Etched GaAs (001) Substrates , 1986 .

[13]  Jean Massies,et al.  Substrate chemical etching prior to molecular‐beam epitaxy: An x‐ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4‐H2O2‐H2O solution , 1985 .

[14]  J. Massies,et al.  X‐ray photoelectron spectroscopy study of the effects of ultrapure water on GaAs , 1985 .

[15]  A. Yoshikawa,et al.  New surface passivation method for GaAs and its effect on the initial growth stage of a heteroepitaxial ZnSe layer , 1992 .

[16]  H. Ohno,et al.  A computer simulation of the recombination process at compound semiconductor surfaces and hetero-interfaces , 1990 .