论文信息 - Diffusion, solubility and gettering of copper in silicon - 字舞流文

Diffusion, solubility and gettering of copper in silicon

A. Istratov | E. Weber | H. Hieslmair | S. McHugo | C. Flink | A. A. Istratov | S. Mchugo

[1] S. Estreicher. Rich chemistry of copper in crystalline silicon , 1999 .

[2] W. Schröter,et al. Electrical and recombination properties of copper-silicide precipitates in silicon , 1998 .

[3] Eicke R. Weber,et al. Intrinsic Diffusion Coefficient of Interstitial Copper in Silicon , 1998 .

[4] E. Weber,et al. Transient ion drift detection of low level copper contamination in silicon , 1997 .

[5] H. Abe,et al. Low‐Temperature Out‐Diffusion of Cu from Silicon Wafers , 1996 .

[6] A. Mesli,et al. Determination of the copper diffusion coefficient in silicon from transient ion-drift , 1993 .

[7] P. Hahn,et al. Acceptor Compensation in Silicon Induced by Chemomechanical Polishing , 1991 .

[8] Eicke R. Weber,et al. Transition metals in silicon , 1983 .

[9] R. N. Hall,et al. Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide , 1964 .

[10] C. Gallagher. Electrolysis of copper in solid silicon , 1957 .

[11] C. S. Fuller,et al. Chemical interactions among defects in germanium and silicon , 1956 .