Resistive FET mixer conversion loss and IMD optimization by selective drain bias

This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device's channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of important minimum conversion loss bias, but also of in-band IMD sweet spots that were then used to optimize a FET resistive mixer performance.

[1]  Stephen A. Maas,et al.  Nonlinear microwave circuits , 1988 .

[2]  H. Zirath,et al.  A new FET frequency multiplier , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[3]  Thomas J. Brazil,et al.  A scalable general-purpose model for microwave FETs including DC/AC dispersion effects , 1997 .

[4]  Solti Peng.  Intermodulation distortion in FET active gate and resistive mixers. , 1995 .

[5]  H. Fukui,et al.  Determination of the basic device parameters of a GaAs MESFET , 1979, The Bell System Technical Journal.

[6]  D. G. Haigh,et al.  Developments in linear and nonlinear FET circuit design using derivative superposition , 1998 .

[7]  J. J. Bussgang,et al.  Analysis of nonlinear systems with multiple inputs , 1974 .

[8]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[9]  Anthony E. Parker,et al.  A realistic large-signal MESFET model for SPICE , 1996, IMS 1996.

[10]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[11]  S. A. Maas.  How to model intermodulation distortion , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[12]  Jorge Perez,et al.  A novel non-linear GaAs fet model for intermodulation analysis in general purpose harmonic-balance simulators , 1993, 1993 23rd European Microwave Conference.

[13]  S.A. Maas,et al.  Modeling MESFETs for intermodulation analysis of resistive FET mixers , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.

[14]  Antonio Tazón,et al.  Characterizing the gate to source nonlinear capacitor role on FET IMD performance , 1998, IMS 1998.

[15]  T. Fernandez,et al.  Extracting a bias-dependent large signal MESFET model from pulsed I/V measurements , 1996 .

[16]  S. Maas.  A GaAs MESFET Mixer with Very Low Intermodulation , 1987 .

[17]  Fadhel M. Ghannouchi,et al.  Multitone characterization and design of FET resistive mixers based on combined active source-pull/load-pull techniques , 1998 .

[18]  Jose C. Pedro,et al.  Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model , 1994 .

[20]  H. Zirath,et al.  A new empirical nonlinear model for HEMT and MESFET devices , 1992 .

[21]  Jose C. Pedro.  Evaluation of MESFET nonlinear intermodulation distortion reduction by channel-doping control , 1997 .

[22]  Kiyomitsu Onodera,et al.  Very Low-Intermodulation GaAs Mixers with Negative Feedback , 1994, 1994 24th European Microwave Conference.

[23]  Stephen A. Maas,et al.  The RF and microwave circuit design cookbook , 1998 .

[24]  S. Maas,et al.  Modeling MESFETs for intermodulation analysis of mixers and amplifiers , 1990 .

[25]  P.J. McCleer,et al.  Intermodulation analysis of FET resistive mixers using Volterra series , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[26]  Jose C. Pedro,et al.  Accurate Nonlinear Resistive FET Modeling for IMD Calculations , 1998, 1998 28th European Microwave Conference.

[27]  D. A. Fraser,et al.  The physics of semiconductor devices , 1986 .

[28]  W. Shockley,et al.  A Unipolar "Field-Effect" Transistor , 1952, Proceedings of the IRE.