Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities.
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Kenji Watanabe | T. Taniguchi | J. Renard | P. Mallet | J. Veuillen | V. Bouchiat | J. Coraux | R. Arenal | L. Magaud | F. Herziger | T. Le Quang | L. Marty | N. Bendiab | V. Nguyen | V. Cherkez | Y. Dappe | S. Lisi | César González | Sudipta Dubey | G. Nayak