Low-temperature characterization of a 1.55-μm multiple-quantum-well laser down to 10 K

A ridge-waveguide 1.55-μm semiconductor laser with a multiple-quantum-well carrier confinement structure was characterized from room temperature down to 10 K. The temperature dependence of important laser parameters, such as threshold current, series resistance, differential efficiency, and emission wavelength, extracted from standard L-I/I-V measurements, is reported. The applicability of the standard ideal-diode model of semiconductor laser at cryogenic temperatures is analyzed.

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