Rigorous modeling of carbon nanotube transistors

Based on the non-equilibrium Green's function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic and inelastic scattering on the device performance have been investigated. The results indicate that elastic scattering has a more detrimental effect on the device characteristics than inelastic scattering. Only for short devices the performance is not affected because of the long mean free path for elastic scattering.

[1]  Siegfried Selberherr,et al.  Separated carrier injection control in carbon nanotube field-effect transistors , 2005 .

[2]  M. Lundstrom,et al.  Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays , 2004, cond-mat/0406494.

[3]  Mark S. Lundstrom,et al.  A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors , 2003, IEEE Transactions on Electron Devices.

[4]  M. Lundstrom,et al.  Role of phonon scattering in carbon nanotube field-effect transistors , 2005 .

[5]  S. Selberherr,et al.  Optimization of Schottky barrier carbon nanotube field effect transistors , 2005 .

[6]  S. Datta.  Electronic transport in mesoscopic systems , 1995 .

[7]  M. Anantram,et al.  Two-dimensional quantum mechanical modeling of nanotransistors , 2001, cond-mat/0111290.

[8]  Mark A. Ratner,et al.  First-principles based matrix Green's function approach to molecular electronic devices: general formalism , 2002 .

[9]  M. Lundstrom,et al.  Ballistic carbon nanotube field-effect transistors , 2003, Nature.

[10]  S. Datta,et al.  Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches , 2002 .

[11]  J. Knoch,et al.  High performance of potassium n-doped carbon nanotube field-effect transistors , 2004, cond-mat/0402350.

[12]  P. McEuen,et al.  Electron-Phonon Scattering in Metallic Single-Walled Carbon Nanotubes , 2003, cond-mat/0309641.

[13]  M. Radosavljevic,et al.  Tunneling versus thermionic emission in one-dimensional semiconductors. , 2004, Physical review letters.