Design and Simulation a Low Voltage Actuated RF MEMS Switch with Improve RF Characteristics

This paper present, the design and simulation of the Ka to v band RF-MEMS capacitive switch. The mechanic design and analysis of the RF-MEMS switches are based on both the finite element method and the full-wave electromagnetic simulation. A double-beam switch with a high impedance short transmission line is proposed to improve RF characteristics. The electronic characteristics, of the switches including insertion and return losses in up-state position, were more than -0.11 dB and less than -23 dB , respectively and isolation on down-state position was more than -30 dB on 50 GHZ frequency. In order to make lower actuated voltage, a serpentine spring folded suspension beam and low actuated area were used so that some important issues such as life and reliability of switch were considered in design.

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