论文信息 - A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions - 字舞流文

A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions

Peyman Servati | Arokia Nathan | Andrei Sazonov | A. Nathan | P. Servati | A. Sazonov

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