论文信息 - Simulation-based design of a pixel for back-side-illuminated CMOS image sensor with thick photo-electric conversion element

Simulation-based design of a pixel for back-side-illuminated CMOS image sensor with thick photo-electric conversion element

The full-specification Super Hi-Vision image sensor realizes 4320 lines of 7680 pixels at 120 frames per second with 12- bit resolution. This sensor requires both high sensitivity and high frame rate, because the illumination per frame decreases as the frame rate increases. Sensitivity of the back-side-illuminated sensor is estimated to be 1.65 times higher than that of the front-side-illuminated sensor, which is calculated from the product of light gathering power of 1.32 times and internal quantum efficiency of 1.25 times. The advantage at high frame rate is that the rising time of the driving voltage waveform of a pixel in the back-side-illuminated sensor is three times faster than that of the front-sideilluminated sensor. To realize a back-side-illuminated structure with a 10 μm-thick photo-electric conversion element, we investigated the cross-sectional potential profile using an np double epitaxial layer structure. Concentrations of the nand p- epitaxial layers were studied, aiming to achieve a transit time of less than 2.3 ns and a potential barrier height of more than 0.117 eV.

Toshiki Arai | Hiroshi Shimamoto

[1] S. Sugawa,et al. Three-Dimensional Wave Optical Simulation for Image Sensors by Localized Boundary Element Method , 2009, IEEE Transactions on Electron Devices.

[2] H. Ohtake,et al. A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters , 2012, IEEE Transactions on Electron Devices.

[3] Masayuki Sugawara,et al. Ultrahigh-definition video system with 4000 scanning lines , 2002 .

[4] Toshiki Arai,et al. A 252-${\rm V/lux}{\cdot}{\rm s}$, 16.7-Million-Frames-Per-Second 312-kpixel Back-Side-Illuminated Ultrahigh-Speed Charge-Coupled Device , 2013, IEEE Transactions on Electron Devices.

[5] Yukihiro Nishida,et al. Super Hi-Vision Video Parameters for Next-Generation Television , 2011 .

[6] H. Mutoh. 3-D optical and electrical simulation for CMOS image sensors , 2003 .

[7] Shoji Kawahito,et al. A 33Mpixel 120fps CMOS image sensor using 12b column-parallel pipelined cyclic ADCs , 2012, 2012 IEEE International Solid-State Circuits Conference.